Bridgold 10pcs IRF640 IRF640N IRF640NPBF N-Channel MOSFET, 18 A, 200 V,TO-220
Fifth GenerationPower MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Maximum Continuous Drain Current:18 A Maximum Drain Source Voltage:200V Maximum Drain Source Resistance:150 mΩ Maximum Gate Threshold Voltage:4V Maximum Gate Source Voltage:-20 V, +20 V Maximum Power Dissipation:150 W Maximum Operating Temperature:+175 °C Minimum Operating Temperature:-55 °C Height :8.77mm Package include: 10pcsIPF640NPBF
Product Features
- Dynamic dv/dt Rating
- 175C Operating Temperature
- Advanced Process Technology
- Ease of Paralleling
- Simple Drive Requirements
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